4N03L01 IPB180N03S4L-01 TO-263-7 30V 180A SMD Triode
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Specifications:
- Technology: Si
- Mounting Style: SMD/SMT
- Package/Case: TO-263-7
- Transistor Polarity: N-Channel
- Number of Channels:1 Channel
- Vds - Drain-Source Breakdown Voltage: 30 V
- Id - Continuous Drain Current:180 A
- Rds On - Drain-Source Resistance: 1.05 mOhms
- Vgs - Gate-Source Voltage: - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage: 1.5 V
- Qg - Gate Charge: 187 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 175 C
- Pd - Power Dissipation: 188 W
- Channel Mode:Enhancement
- Qualification: AEC-Q101
- Tradename: OptiMOS
- Series: OptiMOS-T2
- Packaging: Reel
- Height: 4.4 mm
- Length:10 mm
- Product Type: MOSFET
- Rise Time: 5 ns
Package:
1x 4N03L01 IPB180N03S4L-01 TO-263-7 30V 180A SMD Triode
Product Description
Features:
- It’s an N-channel MOSFET, which means it’s designed to switch electronic signals and power in devices using negative charge carriers (electrons).
- The device is suitable for surface mounting, which allows for a more compact design in electronic circuits.
- With a TO-263-7 package, it provides a robust and reliable form factor for various applications.
- It offers high current handling capability, making it ideal for applications that require significant power delivery.
- The low drain-source resistance ensures high efficiency, reducing energy loss as heat and improving overall performance.
- It’s capable of operating across a wide temperature range, making it versatile for different environments and conditions.
- The enhancement mode operation allows for easy control of the transistor’s conducting state via the gate voltage.
- It is AEC-Q101 qualified, indicating its suitability for automotive applications where reliability under harsh conditions is crucial.
- Part of the OptiMOS-T2 series, it is recognized for its excellent performance in power management tasks.
- Its lightweight design contributes to the ease of integration into various electronic assemblies.
This MOSFET is designed for high efficiency and power density applications. It is AEC-Q101 qualified,
making it suitable for automotive applications. The device features ultra-low Rds(on) for reduced conduction
losses and is 100% avalanche tested for reliability. It supports a wide range of operating temperatures and comes in a green package that is RoHS compliant123.
The IPB180N03S4L-01 is ideal for various applications, including motor control, HVAC fan control, electric pumps, and more,
especially when combined with PWM (Pulse Width Modulation) control4. It’s part of the OptiMOS-T2 series known for its
low on-resistance and high current capability, which contributes to its high thermal efficiency and robustness4.
Frequently asked questions (FAQ):
Q1: What applications is the IPB180N03S4L-01 MOSFET suitable for?
A1: The MOSFET is used in automotive electronics, motor control systems, and power management applications. It’s ideal for electric power steering, HVAC systems, and electric pumps.
Q2: Is the IPB180N03S4L-01 MOSFET AEC-Q101 qualified?
A2: Yes, it is AEC-Q101 qualified, ensuring reliability and performance in automotive applications.
Q3: Can the IPB180N03S4L-01 MOSFET handle high temperatures?
A3: It can operate at temperatures up to 175°C, suitable for high-temperature environments.
Q4: What makes the IPB180N03S4L-01 MOSFET stand out in terms of efficiency?
A4: Its ultra-low drain-source resistance reduces conduction losses, enhancing efficiency.
Q5: Is the IPB180N03S4L-01 MOSFET environmentally friendly?
A5: Yes, it comes in a RoHS compliant package, meeting environmental standards.
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