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Specifications:
- Collector-base voltage open emitter : 160 V
- Collector-emitter voltage open base: 150 V
- Emitter-base voltage open collector: 5 V
- Collector current (DC): 300 mA
- Peak collector current: 600 mA
- Peak base current: 100 mA
- Total power dissipation Tamb : ≤ 25 °C − 630 mW
- Storage temperature: −65 +150 °C
- Junction temperature : 150 °C
- Ambient temperature: −65 +150 °C
Package:
1x 2N5401 PNP high-voltage transistor