PNP

Specifications:Transistor Type: PNPCurrent - Collector (Ic) (Max): 600 mAVoltage - Collector Emitter Breakdown (Max): 40 VVce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mACurrent - Collector Cutoff (Max): 100nADC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2VPower - Max: 625 mWFrequency - Tran..

Specifications:Collector-base voltage open emitter : 160 VCollector-emitter voltage open base: 150 VEmitter-base voltage open collector: 5 VCollector current (DC): 300 mAPeak collector current: 600 mAPeak base current: 100 mATotal power dissipation Tamb : ≤ 25 °C − 630 mWStorage temperature: −65 +15..

Specifications:Model: 2SA1216 Parameters: 200W/180V/17APackage: 1x 2SA1216 Audio Amp Transistor..

Specifications:Categories                                              ..

Specifications:Collector - Base Voltage (VCBO):                 : 230VCollector - Emitter Voltage (VCEO):             : 230VEmitter - Base Voltage (VEBO): ..

Characteristics of the bipolar transistor 2SA1962Type - PNPCollector-Emitter Voltage: -250 VCollector-Base Voltage: -250 VEmitter-Base Voltage: -5 VCollector Current: -17 ACollector Dissipation - 130 WDC Current Gain (hfe) - 55 to 160T..

Speciications: Type Designator: 2SB337 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 12 WMaximum Collector-Base Voltage |Vcb|: 40 VMaximum Collector-Emitter Voltage |Vce|: 30 VMaximum Emitter-Base Voltage |Veb|: 1 VMaximum Collector Current |Ic max|: 7..

Specifications:Type - p-n-p Collector-Emitter Voltage: -50 V Collector-Base Voltage: -50 V Emitter-Base Voltage: -5 V Collector Current: -0.15 A Collector Dissipation - 0.4 W DC Current Gain (hfe) - 70 to 400 Transition Frequency - 80 MHz Operating and Storage Junction Temperature Range ..

Specifications:Part Number : A1837Function : Silicon PNP Epitaxial Type TransistorMaximum RatingsCollector-base voltage : VCBO = −230 VCollector-emitter voltage : VCEO = −230 VEmitter-base voltage : VEBO = −5 VCollector current : IC = −1 ABase current : IB = −0.1 A..

Specifications:Collector-to-Base Voltage : VCBO = -50 VCollector-to-Emitter Voltage : VCEO = -50 VEmitter-to-Base Voltage : VEBO = – 6 VCollector Current : IC  = -10 ACollector Current (Pulse) : ICP = -13 ABase Current : IB = – 2 ACollector Dissipation PC Tc=25°C, PT≤1s 25 WPackage:1x A222..

Features / Technical Specifications:Package Type: TO-92Transistor Type: PNPMax Collector Current(IC): -100mAMax Collector-Emitter Voltage (VCE): -45VMax Collector-Base Voltage (VCB): -50VMax Emitter-Base Voltage (VBE): -5VMax Collector Dissipation (Pc): 500 Milliwa..

BD136 is a PNP transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is provided to base pin. This is where a PNP transistor differs from a NPN transistor, if you are looking for an equ..