NPN

Features / technical specifications:Transistor Type: NPN Max Collector Current(IC): 600mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 75VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency ..

Product DescriptionPart NO.:2N3055Package:TO-3Description:TRANSISTOR NPN 60V 15A TO-3Supplier:SICSTOCKTransistor Type:NPNCurrent - Collector (Ic) (Max):15AVoltage - Collector Emitter Breakdown (Max):60VNoise Figure (dB Typ @ f):-Vce Saturation (Max) @ Ib, Ic:3V @ 3.3A, 10ACurrent - Collector Cutoff ..

Specifications:Type - NPNCollector-Emitter Voltage: 30 VCollector-Base Voltage: 55 VEmitter-Base Voltage: 4 VCollector Current: 0.4 ACollector Dissipation - 5 WDC Current Gain (hfe) - 10 to 200Transition Frequency - 500 MHzOperating and Storage Junction Temperature Range -65 to +200 °C..

Specifications:Transistor Type:NPNCurrent - Collector (Ic) (Max):200mAVoltage - Collector Emitter Breakdown (Max):40VVce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mADC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1VPower - Max:625mWFrequency - Transition:300MHzMounting Type:Through Hole..

Specifications:Package Type: TO-92Transistor Type: NPNMax Collector Current(IC): 500mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 60VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency (fT): 250 MHzMinimum & Maximu..

Description: 2SC-828 NPN General Purpose TransistorFeatures:Collector-Emitter Volt (Vceo): 25VCollector Current (Ic): 0.05Ahfe: 65-700 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain-Bandwidth (ftotal):150MHzType: NPNPackage Include:1 x 2SC-828 NPN General Purpose Transistor..

Type - NPNCollector-Emitter Voltage: 300 VCollector-Base Voltage: 300 VEmitter-Base Voltage: 7 VCollector Current: 0.1 ACollector Dissipation - 0.9 WDC Current Gain (hfe) - 30 to 150Transition Frequency - 50 MHzOperating..

Specifications:Type - NPNCollector-Emitter Voltage: 200 VCollector-Base Voltage: 200 VEmitter-Base Voltage: 6 VCollector Current: 17 ACollector Dissipation - 200 WDC Current Gain (hfe) - 50 to 180Transition Frequency - 20 MHzOperating and Storage Junction Temperature Range -55 to +150 °CPackage - MT..

Specifications:Characteristics             Symbol                   RatingCollector-base voltage         ..

Characteristics of the 2SC5242 bipolar transistorType - NPNCollector-Emitter Voltage: 250 VCollector-Base Voltage: 250 VEmitter-Base Voltage: 5 VCollector Current: 17 ACollector Dissipation - 130 WDC Current Gain (hfe) - 55 to 160Transition Frequency - 30 MHzOperating and Storage Junction Temperatur..

Specifications:High Voltage : VCBO = 1500 VLow Saturation Voltage : VCE (sat) = 5 V (Max.)High Speed : tf = 0.3 µs (Typ.)Bult-in Damper TypeCollector Metal (Fin) is Fully Covered with Mold Resin.Package:1x 2SD2499 SILICON NPN Transistor..

The 2SD882 is a 30V NPN medium power Transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. It is ideal for voltage regulation, relay driver, generic switch, audio power amplifier and DC-DC converter applications.High cu..