NPN

Features / technical specifications:Transistor Type: NPN Max Collector Current(IC): 600mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 75VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency ..

Product DescriptionPart NO.:2N3055Package:TO-3Description:TRANSISTOR NPN 60V 15A TO-3Supplier:SICSTOCKTransistor Type:NPNCurrent - Collector (Ic) (Max):15AVoltage - Collector Emitter Breakdown (Max):60VNoise Figure (dB Typ @ f):-Vce Saturation (Max) @ Ib, Ic:3V @ 3.3A, 10ACurrent - Collector Cutoff ..

Specifications:Type - NPNCollector-Emitter Voltage: 30 VCollector-Base Voltage: 55 VEmitter-Base Voltage: 4 VCollector Current: 0.4 ACollector Dissipation - 5 WDC Current Gain (hfe) - 10 to 200Transition Frequency - 500 MHzOperating and Storage Junction Temperature Range -65 to +200 °C..

Specifications:Transistor Type:NPNCurrent - Collector (Ic) (Max):200mAVoltage - Collector Emitter Breakdown (Max):40VVce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mADC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1VPower - Max:625mWFrequency - Transition:300MHzMounting Type:Through Hole..

Specifications:Package Type: TO-92Transistor Type: NPNMax Collector Current(IC): 500mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 60VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency (fT): 250 MHzMinimum & Maximu..

Description: 2SC-828 NPN General Purpose TransistorFeatures:Collector-Emitter Volt (Vceo): 25VCollector Current (Ic): 0.05Ahfe: 65-700 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain-Bandwidth (ftotal):150MHzType: NPNPackage Include:1 x 2SC-828 NPN General Purpose Transistor..

Type - NPNCollector-Emitter Voltage: 300 VCollector-Base Voltage: 300 VEmitter-Base Voltage: 7 VCollector Current: 0.1 ACollector Dissipation - 0.9 WDC Current Gain (hfe) - 30 to 150Transition Frequency - 50 MHzOperating..

Specifications:Type - NPNCollector-Emitter Voltage: 200 VCollector-Base Voltage: 200 VEmitter-Base Voltage: 6 VCollector Current: 17 ACollector Dissipation - 200 WDC Current Gain (hfe) - 50 to 180Transition Frequency - 20 MHzOperating and Storage Junction Temperature Range -55 to +150 °CPackage - MT..

Specifications:Characteristics             Symbol                   RatingCollector-base voltage         ..

Characteristics of the 2SC5242 bipolar transistorType - NPNCollector-Emitter Voltage: 250 VCollector-Base Voltage: 250 VEmitter-Base Voltage: 5 VCollector Current: 17 ACollector Dissipation - 130 WDC Current Gain (hfe) - 55 to 160Transition Frequency - 30 MHzOperating and Storage Junction Temperatur..

Specifications:High Voltage : VCBO = 1500 VLow Saturation Voltage : VCE (sat) = 5 V (Max.)High Speed : tf = 0.3 µs (Typ.)Bult-in Damper TypeCollector Metal (Fin) is Fully Covered with Mold Resin.Package:1x 2SD2499 SILICON NPN Transistor..

The 2SD882 is a 30V NPN medium power Transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. It is ideal for voltage regulation, relay driver, generic switch, audio power amplifier and DC-DC converter applications.High cu..

Features / Technical Specifications:Package Type: TO-92Transistor Type:  NPNMax Collector Current(IC): 5AMax Collector-Emitter Voltage (VCE): 20VMax Collector-Base Voltage (VCB): 40VMax Emitter-Base Voltage (VEBO): 7VMax Collector Dissipation (Pc): 750 miliWattMax Transition Frequency (fT): 100..

FeaturesSmall Signal NPN TransistorCurrent Gain (hFE): 450 (maximum)Continuous Collector current (IC) is 100mA Collector-Emitter voltage (VCEO) is 45VCollector-Base voltage (VCB0) is 50VEmitter Base Voltage (VBE0) is 6VAvailable in To-18 Metal can Package..

Type Designator: BC109Material of Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 0.3 WMaximum Collector-Base Voltage |Vcb|: 30 VMaximum Collector-Emitter Voltage |Vce|: 20 VMaximum Emitter-Base Voltage |Veb|: 5 VMaximum Collector Current |Ic max|: 0.1 AMax. Operating Junction T..

Specifications:Collector to Base Voltage: Vcbo = 50 VCollector to Emitter Voltage: Vceo = 45 VEmitter to Base Voltage: Vebo = 6 VCollector Current: Ic = 200 mATotal Dissipation : Ptot = 300 mW Junction Temperature: Tj = 125°CStorage Temperature: Tsg = -55 ~ +125°CPackage:1x BC147 Transistor TO9..

BC547 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. BC547 has a gain value of 110 to 800, this value determines the amplification capacity o..

BC548 is a NPN transistor so the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. BC548 has a gain value of 110 to 800, this value determines the amplification capacity of t..

Attributes Table Type General Purpose Polarity NPN CE Voltage-Max 30V Collector Current Max 100mA Power Dissipation-Tot 250mW DC Current Gain-Min 200 Features and Applications The BC848B,215 is a NPN general-purpose transistors in Surface Mounted Device (SMD) ..

Specifications:Plastic casing NPN TransistorContinuous Collector current (IC) is 1.5ACollector-Emitter voltage (VCE) is 80 VCollector-Base voltage (VCB) is 80VBase Current (Ib) is 0.5AEmitter Base Breakdown Voltage (VBE) is 5VDC current gain (hfe) is 40 to 160Available in To-225 packagePackage:1x&nb..

BD140 is a famous PNP type transistor, it is used in many electronics circuits, this transistor can handle current upto 1.5A or 1500mA, due to which it can be used to drive loads upto 1.5A in electronic circuits, for example high power LEDs, relays, motors and more, with these features it ha..

Specifications:Type – NPNCollector-Emitter Voltage: 45 VCollector-Base Voltage: 45 VEmitter-Base Voltage: 5 VCollector Current: 6 ACollector Dissipation – 65 WDC Current Gain (hfe) – 30Operating and Storage Junction Temperature Range -65 to +150 °CPackage – TO-220Package:1x BD243 NPN Transistor..

Specifications:POL: NPNPower: 145mWVce: 30VIc: 30mACase: TO-92Package:1x BF195 - Bipolar Transistors TO-92..

Specifications Frequency - Transition-Noise Figure (dB Typ @ f)-Current - Collector (Ic) (Max)30mADC Current Gain (hFE) (Min) @ Ic, Vce67 @ 1mA, 10VTransistor TypeNPNVoltage - Collector Emitter Breakdown (Max)20VGain-Power - Max350mWLead Free StatusLead FreeRoHS StatusRoHS Compliant..

Specifications: Type Designator: BFR96 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage |Vcb|: 20 V Maximum Collector-Emitter Voltage |Vce|: 15 V Maximum Collector Current |Ic max|: 0.15 A Max. Operating Junction Te..

Specifications: Type Designator: BU806 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 60 W Maximum Collector-Base Voltage |Vcb|: 400 V Maximum Collector-Emitter Voltage |Vce|: 200 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |I..

BU407 epitaxial planar transistor  Specifications:                           Package / Case   Transistor Polarity NPN Collector-Emitter Voltage Vceo   150V Minimum Base C..

C1815 NPN General Purpose TransistorCollector-Emitter Volt (Vceo): 50V Collector-Base Volt (Vcbo): 60V Collector Current (Ic): 0.15A hfe: 70-700 @ 2mA Power Dissipation (Ptot): 400mW Current-Gain-Bandwidth (ftotal): 80MHz Type: NPN..

DescriptionNPN Transistor.Absolute maximum ratings ( Ta=25°C )1. Collector to Base Voltage : Vcbo = 160 V2. Collector to Emitter Voltage : Vceo = 160 V3. Emitter to Base Voltage : Vebo = 6 V4. Collector Current : Ic =1 A5. Total Dissipation : Pc = 900 mW6. Junction Temperature : Tj = 150°C7. Storage..

Type Designator: 2SC3355Material of Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 0.6 WMaximum Collector-Base Voltage |Vcb|: 20 VMaximum Collector Current |Ic max|: 0.1 AMax. Operating Junction Temperature (Tj): 125 °CTransition Frequency (ft): 6500 MHzForward Current Transfer..

Type Designator: 2SC4793Material of transistor: SiPolarity: NPNMaximum collector power dissipation (Pc), W: 20Maximum collector-base voltage |Ucb|, V: 230Maximum collector-emitter voltage |Uce|, V: 230Maximum emitter-base voltage |Ueb|, V: 5Maximum collector current |Ic max|, A: 1Maksimalna temperat..

Features / technical specifications:Package Type: TO-92Transistor Type: NPNMax Collector Current(IC): 150mAMax Collector-Emitter Voltage (VCE): 50VMax Collector-Base Voltage (VCB): 60VMax Emitter-Base Voltage (VEBO): 5VMax Collector Dissipation (Pc): 400 miliWattMa..

D2498 is a silicon NPN transistor, Uce = 600V, Ic = 6A, applications: TV horizontal deflection, color TV..

D2499 Silicon Diffused Power Transistor(general Description)..

D400 Generic Silicon NPN Transistor ..

Product Category:        Bipolar Transistors - BJT Mounting Style:                SMD/SMT Package / Case:                SOT-32-3 Transistor Polarity:        NPN Configuration: &nb..

D880 NPN Power Transistor..

MD1802 High voltage NPN power transistor..

MD1803DFX - High Voltage NPN Power Transistor..