MJE15032G - Bipolar (BJT) Single Transistor
The MJE15032G is a high-performance NPN Bipolar Power Transistor designed for a variety of applications, including automotive. With high collector emitter voltage and power dissipation, it is ideal for demanding tasks.
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Product Details:
The MJE15032G is a high-performance NPN Bipolar Power Transistor designed to handle high power and high-frequency tasks. With a collector emitter voltage of 250V and a transition frequency of 30MHz, this transistor provides reliable performance in various applications, including automotive and other demanding environments.
Key Features:
Usage:
This transistor is ideal for use in power applications, automotive electronics, and other areas requiring high reliability and performance. It can handle significant power loads and is suitable for small-signal transistors, power transistors, dual transistors, Darlington pairs, high-voltage transistors, RF transistors, and bipolar/FET transistors.
Benefits:
Frequently Asked Questions (FAQs):
Q: What is the collector emitter voltage of the MJE15032G Transistor?
A: The collector emitter voltage is 250V.
Q: Can this transistor be used in automotive applications?
A: Yes, the MJE15032G meets automotive qualification standards and is suitable for automotive use.
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Key Features:
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