• High switching speed
• hFE grouping
• hFE improved linearity
• Collector–Emitter Sustaining Voltage: VCEO(SUS) = 100 Vdc (Min)

The 2SC5200 NPN Epitaxial Silicon Transistor offers reliable performance for your high-power amplifier needs. This robust transistor is designed to handle high currents and voltages with ease, ensuring consistent performance in various applications.

Key Features:

• Collector-Base Voltage (VCBO): 230V
• Collector-Emitter Voltage (VCEO): 230V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 15A
• Base Current (IB): 1.5A
• Collector Power Dissipation (PC): 150W (Tc = 25°C)
• Junction Temperature (Tj): 150°C
• Storage Temperature Range (Tstg): -55 to 150°C

Specifications:

• Type: NPN Bipolar Junction Transistor
• Collector Current: 150mA (Max)
• Voltage Ratings:
  • Collector-Emitter: 50V
  • Collector-Base: 60V
  • Emitter-Base: 5V
• Power Dissipation: 400mW
• Frequency: 200MHz
• Gain: 70 to 700
• Package: TO-92

Package:

• 1 x C945 Transistor (TO-92 Package)

• High continuous drain current of up to 35A.
• Handles pulsed drain currents up to 50A.
• Robust drain-to-source breakdown voltage of 60V.
• Low drain-source resistance (0.018 Ohms) for minimal power loss.

The BTA16-600V 16A TRIAC is a high-performance component designed for efficient power switching applications. With a non-repetitive state current of 168A and a repetitive off-state voltage of 600V, it ensures reliable performance. This TRIAC is perfect for through hole mounting and comes in a TO-220-3 package.

Key Features:

• Non-Repetitive State Current: 168A
• Rated Repetitive Off-State Voltage VDRM: 600V
• Off-State Leakage Current @ VDRM IDRM: 5μA
• On-State Voltage: 1.55V
• Holding Current Ih Max: 50mA
• Gate Trigger Voltage - Vgt: 1.3V
• Gate Trigger Current - Igt: 50mA
• Maximum Operating Temperature: +125°C
• Minimum Operating Temperature: -40°C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packaging: Tube

Series: BTA16-600B

Introducing the BU807 NPN Transistor, a high-efficiency silicon transistor ideal for various electronic applications. It features a maximum collector-emitter voltage of 150V and a high current capacity of 8A, making it suitable for demanding tasks. Key features include:

• Transistor Polarity: NPN
• Collector-Emitter Voltage (Vceo): 150V
• Minimum Base Current (Ib): 2A
• Maximum Collector Current (Ic): 8A
• Total Dissipation at Tc≤25°C: 60W
• Package / Case: TO220

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA

The 16TTS12 Thyristors are designed for high-performance applications, providing a robust and reliable solution for your electronic needs. These thyristors feature:

• Average Current (IT(AV)): 10 A
• Repetitive Peak Off-State Voltage (VDRM/VRRM): 800V, 1200V
• On-State Voltage (VTM): 1.4 V
• Gate Trigger Current (IGT): 60 mA
• Operating Junction Temperature (TJ): -40°C to 125°C
• Circuit Configuration: Single SCR

Perfect for use in circuits that require precise and reliable switching capabilities.

The C106D Thyristor is a high-performance component designed for efficient power switching applications. With a nominal current of 4A and a reverse voltage rating (URRM) of 600V, this thyristor ensures reliable performance. Perfect for through hole mounting with a TO-225AA package.

Key Features:

• Nominal Current: 4A
• Reverse Voltage Rating (URRM): 600V
• Mounting Form: TO-225AA

C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Applications: RF, VHF, UHF

Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

• High voltage rating of 1500V for superior performance in demanding applications
• Low saturation voltage of 5V (Max.) ensuring efficient operation
• High-speed switching capabilities with a typical rise time of 0.3 µs
• Built-in damper type for enhanced protection

The 4N26 Optocoupler is a high-performance component designed for electrical isolation and efficient signal transmission. With a voltage isolation of 7500Vpk and a current transfer ratio of at least 20%, it ensures reliable performance. This optocoupler comes in a 6-DIP package for through hole mounting.

Key Features:

• Part NO.: 4N26M
• Package: 6-DIP (0.300, 7.62mm)
• Number of Channels: 1
• Input Type: DC
• Voltage - Isolation: 7500Vpk
• Current Transfer Ratio (Min): 20% @ 10mA
• Voltage - Output: 30V
• Current - DC Forward (If): 60mA
• Vce Saturation (Max): 500mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole

Supplier: SICSTOCK

The BD140 PNP Power Transistor is ideal for audio amplifiers, switching loads under 1.5A, battery chargers, power supplies, motor drivers, and Darlington pairs. This versatile transistor ensures reliable performance in various electronic applications.

Key Features:

• Audio Amplifiers
• Switching Loads under 1.5A
• Battery Chargers
• Power Supplies
• Motor Driver
• Darlington Pair

• Low voltage, high current PNP transistor.
• High current gain (hFE: 85 to 300).
• Suitable for Class B push-pull transistor configurations.
• Compact TO-92 package for easy integration.

The BS170 N-Channel MOSFET Transistor is a Pb-free device designed for low voltage and current applications. It boasts low offset and error voltage, high saturation current capability, and fast switching (TON = 4ns). Easily driven without a buffer, this MOSFET transistor ensures rugged and reliable performance.

Key Features:

• Pb-Free device
• Low offset and error voltage
• Easily driven without buffer
• High density cell design to minimize ON-state resistance RDS(ON)
• Voltage controlled small signal switch
• Particularly suitable for low voltage, low current application
• High saturation current capability
• Rugged and Reliable
• Fast switching (TON = 4ns)

• High Voltage Rating: Up to 300V
• Collector Current: Supports up to 1A
• Low Saturation Voltage: Improves efficiency
• Compact TO-92L Package: Ideal for space-constrained applications