Specifications:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 110A
- Drain-Source Resistance (Rds On): 8mΩ
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 146nC
- Operating Temperature Range: -55°C to 175°C
- Power Dissipation (Pd): 200W
Applications:
- Motor Control Circuits
- DC-DC Converters
- Power Supply Systems
- Battery-Powered Equipment
- H-Bridge Circuits
- High-Power Switching Circuits
Package:
- 1 x IRF3205 N-Channel MOSFET
Description:
The IRF3205 is a N-Channel HEXFET Power MOSFET featuring an extremely low on-resistance of 8mΩ and a high continuous drain current rating of 110A. This device is ideal for power-switching applications, including motor control, DC-DC converters, and battery-powered equipment. It also offers robust thermal performance with an operating temperature range of -55°C to 175°C, making it reliable for demanding applications.
Latest price in Bangladesh (BD).
FAQ:
-
What is the maximum drain-source voltage (Vds) of the IRF3205?
- The maximum Vds of the IRF3205 is 55V.
-
What is the continuous drain current (Id) rating for the IRF3205?
- The IRF3205 can handle a continuous drain current of 110A.
-
What is the on-resistance (Rds On) of the IRF3205?
- The Rds On of the IRF3205 is 8mΩ, providing low losses during operation.
-
What is the operating temperature range of the IRF3205 MOSFET?
- The operating temperature range for the IRF3205 is from -55°C to 175°C.
-
What applications is the IRF3205 suitable for?
- The IRF3205 is suitable for motor control circuits, DC-DC converters, power supply systems, and other high-power switching circuits.
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