The D2499 Silicon Diffused Power Transistor is designed for high-performance applications. Key features include:
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The D2499 Silicon Diffused Power Transistor is a robust component designed for high-performance applications requiring high voltage handling. With a collector-emitter voltage (Vce) of 600V and a collector-base voltage (Vcb) of 1500V, this transistor is ideal for demanding industrial and commercial applications.
Featuring a collector current (Ic) of 6A and a power dissipation (Ptot) of 50W, the D2499 ensures reliable performance in high voltage environments. Its DC current gain (hFE) ranges from 8 to 25, providing significant current gain for various applications. The transition frequency (ft) of 2MHz ensures high-speed operation.
The D2499 is perfect for use in power amplification, signal processing, and other electronic projects requiring efficient switching and amplification. Its TO-3PF package allows for easy integration into various circuit designs.
Ensure proper heat management to maintain optimal performance. Refer to the datasheet for detailed specifications and application guidelines. Use appropriate biasing techniques for accurate switching and amplification operations.
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Supplier: SICSTOCK
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