• High Voltage & Current Handling: 200V Drain-Source voltage and 30A continuous drain current.
• Low Rds On for efficient power switching.
• 180W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

• Bi-Polar PNP Transistor
• DC Current Gain (hFE): Maximum 300
• Continuous Collector Current (IC): 100mA

• Darlington Medium-power NPN Transistor
• High DC Current Gain (hFE), typically 1000
• Continuous Collector Current (IC): 5A
• Collector-Emitter Voltage (VCE): 100V

The Radiolink AT9S Pro Remote Control is a versatile transmitter and receiver designed for RC models, including airplanes, helicopters, drones, and more. With 10/12 channels and long-range control, it ensures stable and reliable performance for all your RC adventures.

Key Features:

• 10/12 Channels
• Long-range control up to 2.1 miles (3.4km)
• Supports multiple models (airplanes, helicopters, drones, cars, boats, etc.)
• Real-time telemetry information
• Signal strength indicator (RSSI) alerts
• Low voltage alarm
• Fail-safe protection
• 2.8-inch LCD screen with DD sounds and vibration alerts

Explore the MJL4281 High Watt Transistor, a high-performance NPN bipolar junction transistor from ON Semiconductor. With a power dissipation of 230W, it is perfect for demanding electronic applications. This transistor is RoHS compliant and features a through-hole mounting style for easy integration into your projects.

Key Features:

• Category: Bipolar Transistors - BJT
• Collector-Emitter Voltage (VCEO Max): 350V
• Collector-Base Voltage (VCBO): 350V
• Emitter-Base Voltage (VEBO): 5V
• Maximum DC Collector Current: 15A
• Gain Bandwidth Product (fT): 35 MHz
• Maximum Operating Temperature: +150°C
• Package/Case: TO-264-3
• Mounting Style: Through Hole
• RoHS compliant

The 20N60 IGBT is a high-performance insulated-gate bipolar transistor (IGBT) designed for efficient power switching applications. With a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 20A, it ensures reliable performance. Available in PG-TO-220-3-1 and PG-TO-247-3 packages.

Key Features:

• Type: SGP20N60 and SGW20N60
• Collector-Emitter Voltage (VCE): 600V
• Continuous Collector Current (IC): 20A
• Saturation Voltage (VCE(sat)): 2.4V
• Maximum Junction Temperature (Tj): 150°C
• Marking: G20N60
• Package: PG-TO-220-3-1 and PG-TO-247-3

Discover the 2N2222 NPN Transistor, ideal for general-purpose low-power amplifying or switching applications. With a maximum collector current of 600mA and a high transition frequency of 300 MHz, it's perfect for various electronic projects.

• High power dissipation of 65 W, suitable for amplifiers and switching applications.
• Maximum collector current of 6 A, capable of handling high current loads.
• Wide operating junction temperature range from -65°C to +150°C.
• Reliable performance with a DC current gain of 30.

Discover the S8050 NPN Transistor, ideal for Class B push-pull audio amplifiers and general-purpose applications in Bangladesh. It offers a collector current of up to 700mA and a collector-emitter voltage of up to 20V, making it suitable for a variety of electronic projects.

The BC547 is a versatile NPN transistor, widely used in electronic circuits for various applications. It features a TO-92 package and is known for its reliability and efficiency. Perfect for both amateur and professional use.

Key Features:

• Pinout Configuration:
  • Collector (C): Current flows in through the collector.
  • Base (B): Controls the biasing of the transistor.
  • Emitter (E): Current drains out through the emitter.
• DC Current Gain (h_FE): Max value of 800
• Continuous Collector Current (I_C): Up to 100mA
• Emitter-Base Voltage (V_BE): 6V
• Base Current (I_B): Max of 5mA

• NPN Transistor: Ideal for low to medium power amplification.
• High Current Handling: Capable of handling up to 500mA of collector current.
• Wide Voltage Range: Operates within a collector-emitter voltage of up to 40V.
• High Gain: Offers a current gain range of 20 – 300.

• Medium power transistor with hfe gain up to 50
• Improved linearity of hfe gain
• Maximum voltage across collector and emitter: 100V
• Maximum current allowed through collector: 3A DC

• Type: NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (Vceo): 25V
• Collector Current (Ic): 0.05A (50mA)
• DC Current Gain (hFE): 65-700 @ 1mA

The 10N60C N-Channel MOSFET is a high-efficiency power transistor designed for demanding applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A, it ensures reliable performance. This MOSFET features a TO-220F package for through hole mounting.

Key Features:

• Part NO.: AOTF10N60
• Package: TO-220F
• FET Type: MOSFET N-Channel, Metal Oxide
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) @ Vds: 1600pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Supplier: SICSTOCK

The BTA26-600 24A 600V TRIAC is a high-performance component designed for efficient power switching applications. With a gate turn-on voltage of 1.3V and a peak off-state voltage of 600V, it ensures reliable performance in demanding environments. This TRIAC is perfect for through hole mounting.

Key Features:

• Gate Turn-On Voltage (Vgt): 1.3V
• Peak Off-State Voltage (Vdrm): 600V
• On-State Current (It): 25.0A
• Gate Current (Igt): 35mA
• Average Gate Power Dissipation (Pg): 1W
• Typical Voltage Change Over Time (dV/dT): 500V/µs

• Bi-Polar PNP Amplifier Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 100mA
• Peak Collector current (Ic) is 200mA