C3355 NPN RF Transistor

The C3355 is a high-performance NPN RF transistor, designed for various radio frequency applications. Key features include:

• Type Designator: 2SC3355
• Material: Silicon (Si)
• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 0.6W
• Maximum Collector-Base Voltage (Vcb): 20V
• Maximum Collector Current (Ic max): 0.1A
• Maximum Operating Junction Temperature (Tj): 125°C
• Transition Frequency (ft): 6500MHz
• Forward Current Transfer Ratio (hFE), MIN: 35
• Package: TO-92

• Pre-Amplifier: Low Level, Low Noise NPN Transistor
• Current Gain (hFE): 60 to 1000 (Good Linearity)
• Continuous Collector Current (IC): 100mA
• Collector-Emitter Voltage (VCEO): 45V

• Drain-Source Voltage (Vds): -55V
• Gate-Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -74A
• Power Dissipation (Ptot): 200W

The IRF9540 P-Channel MOSFET Transistor is designed for high voltage applications, offering robust performance and reliability. Key features include:

• Drain-Source Voltage (V_ds): -100V
• Gate-Source Voltage (V_gs): 20V
• Drain Current (I_d): -23A
• Power Dissipation (P_tot): 140W
• Type: P-Channel

The BTA26-600 24A 600V TRIAC is a high-performance component designed for efficient power switching applications. With a gate turn-on voltage of 1.3V and a peak off-state voltage of 600V, it ensures reliable performance in demanding environments. This TRIAC is perfect for through hole mounting.

Key Features:

• Gate Turn-On Voltage (Vgt): 1.3V
• Peak Off-State Voltage (Vdrm): 600V
• On-State Current (It): 25.0A
• Gate Current (Igt): 35mA
• Average Gate Power Dissipation (Pg): 1W
• Typical Voltage Change Over Time (dV/dT): 500V/µs

• High Voltage Rating: Supports 400V, suitable for high-voltage applications.
• High Current Capacity: Can handle up to 5.5A, making it ideal for power control circuits.
• Fast Switching: Offers fast switching capabilities, reducing power loss and improving efficiency.
• Low Gate-Source Voltage: Operates efficiently at low gate-source voltages, providing better control.

The 4N26 Optocoupler is a high-performance component designed for electrical isolation and efficient signal transmission. With a voltage isolation of 7500Vpk and a current transfer ratio of at least 20%, it ensures reliable performance. This optocoupler comes in a 6-DIP package for through hole mounting.

Key Features:

• Part NO.: 4N26M
• Package: 6-DIP (0.300, 7.62mm)
• Number of Channels: 1
• Input Type: DC
• Voltage - Isolation: 7500Vpk
• Current Transfer Ratio (Min): 20% @ 10mA
• Voltage - Output: 30V
• Current - DC Forward (If): 60mA
• Vce Saturation (Max): 500mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole

Supplier: SICSTOCK

• High Voltage & Current Handling: 100V Drain-Source voltage and 42A continuous drain current.
• Low Rds On for improved power efficiency.
• 160W Maximum Power Dissipation, ensuring stable performance under load.
• Gate-Source Voltage up to 20V for flexible control.

FGA15N120 IGBT - High Performance, Low Saturation Voltage

The FGA15N120 IGBT is an advanced NPT trench technology device with superior conduction and switching performances. This product is designed for applications requiring high avalanche ruggedness and easy parallel operation, such as induction heating and microwave ovens.

• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 1.9V
• IC = 15A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.6mJ
• Extremely Enhanced Avalanche Capability
• TO-3P Package

Enhance your electronic projects with the Bangladesh MJE13003 NPN Power Transistor. This high-voltage, high-speed power transistor is perfect for applications requiring robust performance and reliability.

• Collector-Emitter Voltage (Vceo): 400V
• Collector Current (Ic): 4.0A
• hfe: 8-40 @ 2000mA
• Power Dissipation (Ptot): 75W
• Current-Gain-Bandwidth (ftotal): 4MHz
• Type: NPN

D400 NPN Silicon Transistor

The D400 NPN Silicon Transistor is a reliable and efficient transistor designed for a wide range of electronic applications. Featuring low power consumption and high performance, this transistor is perfect for enhancing the functionality of your electronic circuits. Key features include:

• Type: NPN Silicon Transistor
• Model: D400
• High performance and reliability
• Low power consumption
• Ideal for various electronic applications

The TFK897-E NPN Transistor is designed for high-performance switching and amplification applications. Key features include:

• Collector-Emitter Voltage (V_ce): 80V
• Collector-Base Voltage (V_cb): 80V
• Emitter-Base Voltage (V_eb): 5V
• Collector Current (I_c): 3A
• Power Dissipation (P_tot): 1.5W
• DC Current Gain (h_FE): 100-300
• Transition Frequency (f_t): 150MHz
• Package: TO-92

The D2498 Silicon NPN Transistor is designed for high voltage applications, particularly in TV horizontal deflection and color TV circuits. Key features include:

• Collector-Emitter Voltage (U_ce): 600V
• Collector Current (I_c): 6A
• Type: NPN Transistor

The 18N50 N-Channel Power MOSFET is designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 18A, it offers reliable performance. Ideal for various demanding electronic circuits.

Key Features:

• Drain to Source Voltage (Vdss): 500V
• Continuous Drain Current (Id): 18A
• High Efficiency and Performance
• N-Channel MOSFET

C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor

The C1971 RF/VHF/UHF TO-220 Transistor by Mitsubishi offers excellent performance for radio frequency applications across a wide frequency range, including VHF and UHF bands. Ideal for high-frequency electronic circuits.

• Manufacturer: Mitsubishi
• Type: NPN Transistor
• Package: TO-220
• Applications: RF, VHF, UHF

Package Includes: 1x C1971 RF/VHF/UHF TO-220 Mitsubishi Transistor