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Browse MOSFET Transistors at the best price in Bangladesh from our store. Great selection of MOSFET Transistors at the guaranteed lowest price. See all of our exclusive deals on MOSFET Transistors.

Model: 0619
Product DescriptionPart NO.:AOTF10N60Package:TO-220FDescription:MOSFET N-CH 600V 10A TO220FSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:10ARds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10VVgs(th) (Max) @..
Ex Tax:৳51.00
Model: 0618
·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) Specifications: ·Static Drain-Source On-Resistance: RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators and others ·Switching converters, motor drivers, relay drivers..
Ex Tax:৳48.00
Model: 2236
Specification:Transistor Type: JFET - N Type ChannelVds (Drain-Source Voltage): 25 VDCVdg (Drain-Gate Voltage): 25 VDCVgs (Gate-Source Voltage): 25 VDCIgf - (Forward Gate Current): 10 mAPower: 350 mWOn Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0..
Ex Tax:৳58.00
Model: 0720
Specifications:Maximum Continuous Drain Current : 200mAMaximum Drain Source Voltage          : 60VMaximum Drain Source Resistance    : 5ΩGate Threshold Voltage (VGS)              : Min = 0.8V | Max = 3VMaximum Power Dissipation&nb..
Ex Tax:৳10.00
Model: 3671
FET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C80A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VRds On (Max) @ Id, Vgs15mOhm @ 40A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs182 nC @ 10 VVgs (Max)±20VInput Capa..
Ex Tax:৳151.00
Model: 0990
Features:Pb-Free deviceLow offset and error voltageEasily driven without bufferHigh density cell design to minimize ON-state resistance RDS(ON)Voltage controlled small signal switchParticularly suits for low voltage, low current applicationHigh saturation current capabilityRugged and ReliableFast sw..
Ex Tax:৳60.00
Model: 4175
Specifications:Absolute Maximum Ratings (TA=25°C unless otherwise noted)Drain-to-Source Voltage:  60 VGate-to-Source Voltage:  ±25 VContinuous Drain Current: 130 - 210A Pulsed Drain Current TC=25°CAvalanche Current:  40AAvalanche energy: 800 mJMaximum Power Dissipation: 110-220 W..
Ex Tax:৳115.00
Model: 0615
Product DescriptionPart NO.:FQA24N60Package:TO-3PNDescription:MOSFET N-CH 600V 23.5A TO-3PSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:23.5ARds On (Max) @ Id, Vgs:240 mOhm @ 11.8A, 10VVgs(th) (Ma..
Ex Tax:৳55.00
FQP34N20 N-Channel 200 V 31A (Tc) 180W (Tc) Through Hole Mosfet
New Upcoming SOLD OUT
Model: 4750
Specifications:Transistors: FETs, MOSFETsSeries: QFET®FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 200 VCurrent - Continuous Drain (Id) @ 25°C: 31A (Tc)Drive Voltage (Max Rds On, Min Rds On): 10VRds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10VVgs(th) (Max) @ Id:..
Ex Tax:৳0.00
Brand: AVX Model: 3683
Detailed Specifications:-Number of Channels1 ChannelTransistor PolarityN-ChannelDrain-Source Breakdown Voltage (Vds)55VContinuous Drain Current (Id)110ADrain-Source Resistance (Rds On)8mOhmsGate-Source Voltage (Vgs)20VGate Charge (Qg)146 nCOperating Temperature Range-55 - 175°CPower Dissipation (Pd)..
Ex Tax:৳67.00
Model: 3674
IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr..
Ex Tax:৳45.00
Model: 4357
Specifications:N-Channel Power MOSFETContinuous Drain Current (ID): 9.2ADrain to Source Breakdown Voltage: 100VDrain Source Resistance (RDS) is 0.27 OhmsGate threshold voltage (VGS-th) is 4V (max)Rise time and fall time is 30nS and 20nSIt is commonly used with Arduino, due to its low threshold volta..
Ex Tax:৳75.00
Model: 3677
Description: IRF5210 P-Channel Mosfet Transistor-OrginalFeatures:Drain-Source Volt (Vds): -55VGate-Source Volt (Vgs): 20VDrain Current (Id): -74APower Dissipation (Ptot): 200WType: P-ChannelPackage Include:1 x IRF5210 P-Channel Mosfet Transistor-Orginal..
Ex Tax:৳90.00
Model: 2005
When you need to switch a lot of power, N channel MOSFETs are best for the job. These FETs can switch over 33A and 100V and are TO-220 package so they fit nicely into any breadboard or perfboard. Heat sinking is easy with TO-220's, but because of the very low Rds(on) of down to 44 milliohm (dependin..
Ex Tax:৳55.00
Model: 4557
Specifications:Transistor type: N-channelMaximum applied voltage from drain-to-source (VDS): 200 VMaximum Drain current (continuous) ID: 9 AMaximum Drain Current (Pulse): 36 AMaximum Power dissipation: 74 WOn-state resistance between drain and source: 0.40 Ωgate-to-source voltage: ±20 VGate charge Q..
Ex Tax:৳55.00
Model: 1055
IRF840 N-Channel Mosfet.FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-ChannelIRF840 Datasheet..
Ex Tax:৳95.00
Model: 0919
IRF9540 P-Channel Mosfet Transistor.FeaturesDrain-Source Volt (Vds): -100VGate-Source Volt (Vgs): 20VDrain Current (Id): -23APower Dissipation (Ptot): 140WType: P-ChannelIRF9540 Datasheet..
Ex Tax:৳70.00
Model: 2351
Specifications:Small signal N-Channel MOSFETContinuous Drain Current (ID) is 49A at 25°CPulsed Drain Current (ID-peak) is 160AMinimum Gate threshold voltage (VGS-th) is 2VMaximum Gate threshold voltage (VGS-th) is 4VGate-Source Voltage is (VGS) is ±20V (max)Maximum Drain-Source Voltage (VDS) is 55VR..
Ex Tax:৳49.00
Model: 3672
Description: MOSFET N-Channel 200V 30A TO-247Features:Drain-Source Volt (Vds): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 30APower Dissipation (Ptot): 180WType: N-ChannelPackage Include:1 x IRFP250 MOSFET N-Channel..
Ex Tax:৳120.00
Model: 4513
Specifications:N-Channel Power MOSFETContinuous Drain Current (ID): 35APulsed Drain Current (ID-peak) is 50ADrain to Source Breakdown Voltage: 60VDrain Source Resistance (RDS) is 0.018 OhmsGate threshold voltage (VGS-th) is 20V (max)Rise time and fall time is 50nS and 15nSInput Capacitance 1300pFOut..
Ex Tax:৳57.00
Model: 4523
Specifications:Type Designator: IXTH21N50Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 300 WMaximum Drain-Source Voltage |Vds|: 500 VMaximum Gate-Source Voltage |Vgs|: 20 VMaximum Gate-Threshold Voltage |Vgs(th)|: 4 VMaximum Drain Current |Id|: 21 AMaxi..
Ex Tax:৳189.00
Model: 4038
Specifications: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 W (Typ.)Package:1x SSP5N90A N-Channel power..
Ex Tax:৳69.00
Model: 1063
Transistor IRF740 MOSFET N Channel 400 Volt..
Ex Tax:৳55.00
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