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Model: 0619
Product DescriptionPart NO.:AOTF10N60Package:TO-220FDescription:MOSFET N-CH 600V 10A TO220FSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:10ARds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10VVgs(th) (Max) @..
৳51.00
Ex Tax:৳51.00
Model: 0618
·Drain Current ID= 18A@ TC=25℃
·Drain Source Voltage
: VDSS= 500V(Min)
Specifications: ·Static Drain-Source On-Resistance: RDS(on) = 0.32Ω(Max)
·Fast Switching
·APPLICATIONS
·Switch regulators and others
·Switching converters, motor drivers, relay drivers..
৳48.00
Ex Tax:৳48.00
Model: 2236
Specification:Transistor Type: JFET - N Type ChannelVds (Drain-Source Voltage): 25 VDCVdg (Drain-Gate Voltage): 25 VDCVgs (Gate-Source Voltage): 25 VDCIgf - (Forward Gate Current): 10 mAPower: 350 mWOn Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0..
৳58.00
Ex Tax:৳58.00
Model: 0720
Specifications:Maximum Continuous Drain Current : 200mAMaximum Drain Source Voltage : 60VMaximum Drain Source Resistance : 5ΩGate Threshold Voltage (VGS) : Min = 0.8V | Max = 3VMaximum Power Dissipation&nb..
৳10.00
Ex Tax:৳10.00
Model: 3671
FET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C80A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VRds On (Max) @ Id, Vgs15mOhm @ 40A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs182 nC @ 10 VVgs (Max)±20VInput Capa..
৳151.00
Ex Tax:৳151.00
Model: 0990
Features:Pb-Free deviceLow offset and error voltageEasily driven without bufferHigh density cell design to minimize ON-state resistance RDS(ON)Voltage controlled small signal switchParticularly suits for low voltage, low current applicationHigh saturation current capabilityRugged and ReliableFast sw..
৳60.00
Ex Tax:৳60.00
Model: 4175
Specifications:Absolute Maximum Ratings (TA=25°C unless otherwise noted)Drain-to-Source Voltage: 60 VGate-to-Source Voltage: ±25 VContinuous Drain Current: 130 - 210A Pulsed Drain Current TC=25°CAvalanche Current: 40AAvalanche energy: 800 mJMaximum Power Dissipation: 110-220 W..
৳115.00
Ex Tax:৳115.00
Model: 0615
Product DescriptionPart NO.:FQA24N60Package:TO-3PNDescription:MOSFET N-CH 600V 23.5A TO-3PSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:23.5ARds On (Max) @ Id, Vgs:240 mOhm @ 11.8A, 10VVgs(th) (Ma..
৳55.00
Ex Tax:৳55.00
Model: 4750
Specifications:Transistors: FETs, MOSFETsSeries: QFET®FET Type: N-ChannelTechnology: MOSFET (Metal Oxide)Drain to Source Voltage (Vdss): 200 VCurrent - Continuous Drain (Id) @ 25°C: 31A (Tc)Drive Voltage (Max Rds On, Min Rds On): 10VRds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10VVgs(th) (Max) @ Id:..
৳0.00
Ex Tax:৳0.00
Brand: AVX
Model: 3683
Detailed Specifications:-Number of Channels1 ChannelTransistor PolarityN-ChannelDrain-Source Breakdown Voltage (Vds)55VContinuous Drain Current (Id)110ADrain-Source Resistance (Rds On)8mOhmsGate-Source Voltage (Vgs)20VGate Charge (Qg)146 nCOperating Temperature Range-55 - 175°CPower Dissipation (Pd)..
৳67.00
Ex Tax:৳67.00
Model: 3674
IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr..
৳45.00
Ex Tax:৳45.00
Model: 4357
Specifications:N-Channel Power MOSFETContinuous Drain Current (ID): 9.2ADrain to Source Breakdown Voltage: 100VDrain Source Resistance (RDS) is 0.27 OhmsGate threshold voltage (VGS-th) is 4V (max)Rise time and fall time is 30nS and 20nSIt is commonly used with Arduino, due to its low threshold volta..
৳75.00
Ex Tax:৳75.00
Model: 3677
Description: IRF5210 P-Channel Mosfet Transistor-OrginalFeatures:Drain-Source Volt (Vds): -55VGate-Source Volt (Vgs): 20VDrain Current (Id): -74APower Dissipation (Ptot): 200WType: P-ChannelPackage Include:1 x IRF5210 P-Channel Mosfet Transistor-Orginal..
৳90.00
Ex Tax:৳90.00
Model: 2005
When you need to switch a lot of power, N channel MOSFETs are best for the job. These FETs can switch over 33A and 100V and are TO-220 package so they fit nicely into any breadboard or perfboard. Heat sinking is easy with TO-220's, but because of the very low Rds(on) of down to 44 milliohm (dependin..
৳55.00
Ex Tax:৳55.00
Model: 4557
Specifications:Transistor type: N-channelMaximum applied voltage from drain-to-source (VDS): 200 VMaximum Drain current (continuous) ID: 9 AMaximum Drain Current (Pulse): 36 AMaximum Power dissipation: 74 WOn-state resistance between drain and source: 0.40 Ωgate-to-source voltage: ±20 VGate charge Q..
৳55.00
Ex Tax:৳55.00
Model: 1055
IRF840 N-Channel Mosfet.FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-ChannelIRF840 Datasheet..
৳95.00
Ex Tax:৳95.00
Model: 0919
IRF9540 P-Channel Mosfet Transistor.FeaturesDrain-Source Volt (Vds): -100VGate-Source Volt (Vgs): 20VDrain Current (Id): -23APower Dissipation (Ptot): 140WType: P-ChannelIRF9540 Datasheet..
৳70.00
Ex Tax:৳70.00
Model: 2351
Specifications:Small signal N-Channel MOSFETContinuous Drain Current (ID) is 49A at 25°CPulsed Drain Current (ID-peak) is 160AMinimum Gate threshold voltage (VGS-th) is 2VMaximum Gate threshold voltage (VGS-th) is 4VGate-Source Voltage is (VGS) is ±20V (max)Maximum Drain-Source Voltage (VDS) is 55VR..
৳49.00
Ex Tax:৳49.00
Model: 3672
Description: MOSFET N-Channel 200V 30A TO-247Features:Drain-Source Volt (Vds): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 30APower Dissipation (Ptot): 180WType: N-ChannelPackage Include:1 x IRFP250 MOSFET N-Channel..
৳120.00
Ex Tax:৳120.00
Model: 4513
Specifications:N-Channel Power MOSFETContinuous Drain Current (ID): 35APulsed Drain Current (ID-peak) is 50ADrain to Source Breakdown Voltage: 60VDrain Source Resistance (RDS) is 0.018 OhmsGate threshold voltage (VGS-th) is 20V (max)Rise time and fall time is 50nS and 15nSInput Capacitance 1300pFOut..
৳57.00
Ex Tax:৳57.00
Model: 4523
Specifications:Type Designator: IXTH21N50Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 300 WMaximum Drain-Source Voltage |Vds|: 500 VMaximum Gate-Source Voltage |Vgs|: 20 VMaximum Gate-Threshold Voltage |Vgs(th)|: 4 VMaximum Drain Current |Id|: 21 AMaxi..
৳189.00
Ex Tax:৳189.00
Model: 4038
Specifications: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 W (Typ.)Package:1x SSP5N90A N-Channel power..
৳69.00
Ex Tax:৳69.00
Model: 1063
Transistor IRF740 MOSFET N Channel 400 Volt..
৳55.00
Ex Tax:৳55.00Showing 1 to 23 of 23 (1 Pages)