MOSFETs

Product DescriptionPart NO.:AOTF10N60Package:TO-220FDescription:MOSFET N-CH 600V 10A TO220FSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:10ARds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10VVgs(th) (Max) @..

·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) Specifications: ·Static Drain-Source On-Resistance: RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators and others ·Switching converters, motor drivers, relay drivers..

Specification:Transistor Type: JFET - N Type ChannelVds (Drain-Source Voltage): 25 VDCVdg (Drain-Gate Voltage): 25 VDCVgs (Gate-Source Voltage): 25 VDCIgf - (Forward Gate Current): 10 mAPower: 350 mWOn Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0..

Specifications:Maximum Continuous Drain Current : 200mAMaximum Drain Source Voltage          : 60VMaximum Drain Source Resistance    : 5ΩGate Threshold Voltage (VGS)              : Min = 0.8V | Max = 3VMaximum Power Dissipation&nb..

FET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C80A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VRds On (Max) @ Id, Vgs15mOhm @ 40A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs182 nC @ 10 VVgs (Max)±20VInput Capa..

Features:Pb-Free deviceLow offset and error voltageEasily driven without bufferHigh density cell design to minimize ON-state resistance RDS(ON)Voltage controlled small signal switchParticularly suits for low voltage, low current applicationHigh saturation current capabilityRugged and ReliableFast sw..

Specifications:Absolute Maximum Ratings (TA=25°C unless otherwise noted)Drain-to-Source Voltage:  60 VGate-to-Source Voltage:  ±25 VContinuous Drain Current: 130 - 210A Pulsed Drain Current TC=25°CAvalanche Current:  40AAvalanche energy: 800 mJMaximum Power Dissipation: 110-220 W..

Product DescriptionPart NO.:FQA24N60Package:TO-3PNDescription:MOSFET N-CH 600V 23.5A TO-3PSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:23.5ARds On (Max) @ Id, Vgs:240 mOhm @ 11.8A, 10VVgs(th) (Ma..

Detailed Specifications:-Number of Channels1 ChannelTransistor PolarityN-ChannelDrain-Source Breakdown Voltage (Vds)55VContinuous Drain Current (Id)110ADrain-Source Resistance (Rds On)8mOhmsGate-Source Voltage (Vgs)20VGate Charge (Qg)146 nCOperating Temperature Range-55 - 175°CPower Dissipation (Pd)..

IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr..

Specifications:N-Channel Power MOSFETContinuous Drain Current (ID): 9.2ADrain to Source Breakdown Voltage: 100VDrain Source Resistance (RDS) is 0.27 OhmsGate threshold voltage (VGS-th) is 4V (max)Rise time and fall time is 30nS and 20nSIt is commonly used with Arduino, due to its low threshold volta..

Description: IRF5210 P-Channel Mosfet Transistor-OrginalFeatures:Drain-Source Volt (Vds): -55VGate-Source Volt (Vgs): 20VDrain Current (Id): -74APower Dissipation (Ptot): 200WType: P-ChannelPackage Include:1 x IRF5210 P-Channel Mosfet Transistor-Orginal..

When you need to switch a lot of power, N channel MOSFETs are best for the job. These FETs can switch over 33A and 100V and are TO-220 package so they fit nicely into any breadboard or perfboard. Heat sinking is easy with TO-220's, but because of the very low Rds(on) of down to 44 milliohm (dependin..

Specifications:Transistor type: N-channelMaximum applied voltage from drain-to-source (VDS): 200 VMaximum Drain current (continuous) ID: 9 AMaximum Drain Current (Pulse): 36 AMaximum Power dissipation: 74 WOn-state resistance between drain and source: 0.40 Ωgate-to-source voltage: ±20 VGate charge Q..

IRF840 N-Channel Mosfet.FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-ChannelIRF840 Datasheet..

IRF9540 P-Channel Mosfet Transistor.FeaturesDrain-Source Volt (Vds): -100VGate-Source Volt (Vgs): 20VDrain Current (Id): -23APower Dissipation (Ptot): 140WType: P-ChannelIRF9540 Datasheet..

Specifications:Small signal N-Channel MOSFETContinuous Drain Current (ID) is 49A at 25°CPulsed Drain Current (ID-peak) is 160AMinimum Gate threshold voltage (VGS-th) is 2VMaximum Gate threshold voltage (VGS-th) is 4VGate-Source Voltage is (VGS) is ±20V (max)Maximum Drain-Source Voltage (VDS) is 55VR..

Description: MOSFET N-Channel 200V 30A TO-247Features:Drain-Source Volt (Vds): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 30APower Dissipation (Ptot): 180WType: N-ChannelPackage Include:1 x IRFP250 MOSFET N-Channel..

Specifications:N-Channel Power MOSFETContinuous Drain Current (ID): 35APulsed Drain Current (ID-peak) is 50ADrain to Source Breakdown Voltage: 60VDrain Source Resistance (RDS) is 0.018 OhmsGate threshold voltage (VGS-th) is 20V (max)Rise time and fall time is 50nS and 15nSInput Capacitance 1300pFOut..

Specifications:Type Designator: IXTH21N50Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 300 WMaximum Drain-Source Voltage |Vds|: 500 VMaximum Gate-Source Voltage |Vgs|: 20 VMaximum Gate-Threshold Voltage |Vgs(th)|: 4 VMaximum Drain Current |Id|: 21 AMaxi..

Specifications: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS = 900V Low RDS(ON) : 2.300 W (Typ.)Package:1x SSP5N90A N-Channel power..

Transistor IRF740 MOSFET N Channel 400 Volt..