Transistors

10200CT MBRF10200 Schottky & Rectifiers 10A 200Vrrm 110A 0.91Vf TO-220F ..

Description:IGBT Transistors FAST IGBT NPT TECH 600V 10A..

Product DescriptionPart NO.:AOTF10N60Package:TO-220FDescription:MOSFET N-CH 600V 10A TO220FSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:10ARds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10VVgs(th) (Max) @..

·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) Specifications: ·Static Drain-Source On-Resistance: RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators and others ·Switching converters, motor drivers, relay drivers..

Type                                 VCE             IC             VCE(sat)    ..

Features / technical specifications:Transistor Type: NPN Max Collector Current(IC): 600mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 75VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency ..

Product DescriptionPart NO.:2N3055Package:TO-3Description:TRANSISTOR NPN 60V 15A TO-3Supplier:SICSTOCKTransistor Type:NPNCurrent - Collector (Ic) (Max):15AVoltage - Collector Emitter Breakdown (Max):60VNoise Figure (dB Typ @ f):-Vce Saturation (Max) @ Ib, Ic:3V @ 3.3A, 10ACurrent - Collector Cutoff ..

Specification:Transistor Type: JFET - N Type ChannelVds (Drain-Source Voltage): 25 VDCVdg (Drain-Gate Voltage): 25 VDCVgs (Gate-Source Voltage): 25 VDCIgf - (Forward Gate Current): 10 mAPower: 350 mWOn Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0..

Specifications:Type - NPNCollector-Emitter Voltage: 30 VCollector-Base Voltage: 55 VEmitter-Base Voltage: 4 VCollector Current: 0.4 ACollector Dissipation - 5 WDC Current Gain (hfe) - 10 to 200Transition Frequency - 500 MHzOperating and Storage Junction Temperature Range -65 to +200 °C..

Specifications:Transistor Type:NPNCurrent - Collector (Ic) (Max):200mAVoltage - Collector Emitter Breakdown (Max):40VVce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mADC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1VPower - Max:625mWFrequency - Transition:300MHzMounting Type:Through Hole..

Specifications:Package Type: TO-92Transistor Type: NPNMax Collector Current(IC): 500mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 60VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency (fT): 250 MHzMinimum & Maximu..

Specifications:Transistor Type: PNPCurrent - Collector (Ic) (Max): 600 mAVoltage - Collector Emitter Breakdown (Max): 40 VVce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mACurrent - Collector Cutoff (Max): 100nADC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2VPower - Max: 625 mWFrequency - Tran..