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Browse Transistors at the best price in Bangladesh from our store. Great selection of Transistors at the guaranteed lowest price. Shop for IGBT Transistor, MOSFETs Transistor, NPN Transistor, PNP Transistor, and Triac Transistors.

Model: 3347
10200CT MBRF10200 Schottky & Rectifiers 10A 200Vrrm 110A 0.91Vf TO-220F ..
৳61.00
Ex Tax:৳61.00
Model: 0381
Description:IGBT Transistors FAST IGBT NPT TECH 600V 10A..
৳200.00
Ex Tax:৳200.00
Model: 0619
Product DescriptionPart NO.:AOTF10N60Package:TO-220FDescription:MOSFET N-CH 600V 10A TO220FSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:10ARds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10VVgs(th) (Max) @..
৳51.00
Ex Tax:৳51.00
Model: 0618
·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) Specifications: ·Static Drain-Source On-Resistance: RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators and others ·Switching converters, motor drivers, relay drivers..
৳48.00
Ex Tax:৳48.00
Model: 0614
Type                                 VCE             IC             VCE(sat)    ..
৳280.00
Ex Tax:৳280.00
Model: 0170
Features / technical specifications:Transistor Type: NPN Max Collector Current(IC): 600mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 75VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency ..
৳7.00
Ex Tax:৳7.00
Model: 0211
Product DescriptionPart NO.:2N3055Package:TO-3Description:TRANSISTOR NPN 60V 15A TO-3Supplier:SICSTOCKTransistor Type:NPNCurrent - Collector (Ic) (Max):15AVoltage - Collector Emitter Breakdown (Max):60VNoise Figure (dB Typ @ f):-Vce Saturation (Max) @ Ib, Ic:3V @ 3.3A, 10ACurrent - Collector Cutoff ..
৳47.00
Ex Tax:৳47.00
Model: 2236
Specification:Transistor Type: JFET - N Type ChannelVds (Drain-Source Voltage): 25 VDCVdg (Drain-Gate Voltage): 25 VDCVgs (Gate-Source Voltage): 25 VDCIgf - (Forward Gate Current): 10 mAPower: 350 mWOn Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0..
৳58.00
Ex Tax:৳58.00
Model: 2280
Specifications:Type - NPNCollector-Emitter Voltage: 30 VCollector-Base Voltage: 55 VEmitter-Base Voltage: 4 VCollector Current: 0.4 ACollector Dissipation - 5 WDC Current Gain (hfe) - 10 to 200Transition Frequency - 500 MHzOperating and Storage Junction Temperature Range -65 to +200 °C..
৳75.00
Ex Tax:৳75.00
Model: 0212
Specifications:Transistor Type:NPNCurrent - Collector (Ic) (Max):200mAVoltage - Collector Emitter Breakdown (Max):40VVce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mADC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1VPower - Max:625mWFrequency - Transition:300MHzMounting Type:Through Hole..
৳5.00
Ex Tax:৳5.00
Model: 4288
Specifications:Package Type: TO-92Transistor Type: NPNMax Collector Current(IC): 500mAMax Collector-Emitter Voltage (VCE): 40VMax Collector-Base Voltage (VCB): 60VMax Emitter-Base Voltage (VEBO): 6VMax Collector Dissipation (Pc): 625 miliWattMax Transition Frequency (fT): 250 MHzMinimum & Maximu..
৳5.00
Ex Tax:৳5.00
Model: 4289
Specifications:Transistor Type: PNPCurrent - Collector (Ic) (Max): 600 mAVoltage - Collector Emitter Breakdown (Max): 40 VVce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mACurrent - Collector Cutoff (Max): 100nADC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2VPower - Max: 625 mWFrequency - Tran..
৳5.00
Ex Tax:৳5.00
Model: 2936
Specifications:Collector-base voltage open emitter : 160 VCollector-emitter voltage open base: 150 VEmitter-base voltage open collector: 5 VCollector current (DC): 300 mAPeak collector current: 600 mAPeak base current: 100 mATotal power dissipation Tamb : ≤ 25 °C − 630 mWStorage temperature: −65 +15..
৳4.00
Ex Tax:৳4.00
Model: 0720
Specifications:Maximum Continuous Drain Current : 200mAMaximum Drain Source Voltage          : 60VMaximum Drain Source Resistance    : 5ΩGate Threshold Voltage (VGS)              : Min = 0.8V | Max = 3VMaximum Power Dissipation&nb..
৳10.00
Ex Tax:৳10.00
Model: 2116
Specifications:Model: 2SA1216 Parameters: 200W/180V/17APackage: 1x 2SA1216 Audio Amp Transistor..
৳679.00
Ex Tax:৳679.00
Model: 2121
Specifications:Categories                                              ..
৳257.00
Ex Tax:৳257.00
Brand: Toshiba Model: 1040
Specifications:Collector - Base Voltage (VCBO):                 : 230VCollector - Emitter Voltage (VCEO):             : 230VEmitter - Base Voltage (VEBO): ..
৳230.00
Ex Tax:৳230.00
Model: 2003
Characteristics of the bipolar transistor 2SA1962Type - PNPCollector-Emitter Voltage: -250 VCollector-Base Voltage: -250 VEmitter-Base Voltage: -5 VCollector Current: -17 ACollector Dissipation - 130 WDC Current Gain (hfe) - 55 to 160T..
৳93.00
Ex Tax:৳93.00
Model: 0738
Speciications: Type Designator: 2SB337 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 12 WMaximum Collector-Base Voltage |Vcb|: 40 VMaximum Collector-Emitter Voltage |Vce|: 30 VMaximum Emitter-Base Voltage |Veb|: 1 VMaximum Collector Current |Ic max|: 7..
৳205.00
Ex Tax:৳205.00
Model: 3679
Description: 2SC-828 NPN General Purpose TransistorFeatures:Collector-Emitter Volt (Vceo): 25VCollector Current (Ic): 0.05Ahfe: 65-700 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain-Bandwidth (ftotal):150MHzType: NPNPackage Include:1 x 2SC-828 NPN General Purpose Transistor..
৳3.00
Ex Tax:৳3.00
Model: 3688
Type - NPNCollector-Emitter Voltage: 300 VCollector-Base Voltage: 300 VEmitter-Base Voltage: 7 VCollector Current: 0.1 ACollector Dissipation - 0.9 WDC Current Gain (hfe) - 30 to 150Transition Frequency - 50 MHzOperating..
৳50.00
Ex Tax:৳50.00
Model: 2122
Specifications:Type - NPNCollector-Emitter Voltage: 200 VCollector-Base Voltage: 200 VEmitter-Base Voltage: 6 VCollector Current: 17 ACollector Dissipation - 200 WDC Current Gain (hfe) - 50 to 180Transition Frequency - 20 MHzOperating and Storage Junction Temperature Range -55 to +150 °CPackage - MT..
৳150.00
Ex Tax:৳150.00
Model: 1039
Specifications:Characteristics             Symbol                   RatingCollector-base voltage         ..
৳230.00
Ex Tax:৳230.00
Model: 2002
Characteristics of the 2SC5242 bipolar transistorType - NPNCollector-Emitter Voltage: 250 VCollector-Base Voltage: 250 VEmitter-Base Voltage: 5 VCollector Current: 17 ACollector Dissipation - 130 WDC Current Gain (hfe) - 55 to 160Transition Frequency - 30 MHzOperating and Storage Junction Temperatur..
৳90.00
Ex Tax:৳90.00
Model: 4176
Specifications:High Voltage : VCBO = 1500 VLow Saturation Voltage : VCE (sat) = 5 V (Max.)High Speed : tf = 0.3 µs (Typ.)Bult-in Damper TypeCollector Metal (Fin) is Fully Covered with Mold Resin.Package:1x 2SD2499 SILICON NPN Transistor..
৳25.00
Ex Tax:৳25.00
Model: 3779
The 2SD882 is a 30V NPN medium power Transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. It is ideal for voltage regulation, relay driver, generic switch, audio power amplifier and DC-DC converter applications.High cu..
৳7.00
Ex Tax:৳7.00
Model: 3771
Features / Technical Specifications:Package Type: TO-92Transistor Type:  NPNMax Collector Current(IC): 5AMax Collector-Emitter Voltage (VCE): 20VMax Collector-Base Voltage (VCB): 40VMax Emitter-Base Voltage (VEBO): 7VMax Collector Dissipation (Pc): 750 miliWattMax Transition Frequency (fT): 100..
৳5.00
Ex Tax:৳5.00
Model: 3671
FET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C80A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VRds On (Max) @ Id, Vgs15mOhm @ 40A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs182 nC @ 10 VVgs (Max)±20VInput Capa..
৳151.00
Ex Tax:৳151.00
Model: 0255
Specifications:Type - p-n-p Collector-Emitter Voltage: -50 V Collector-Base Voltage: -50 V Emitter-Base Voltage: -5 V Collector Current: -0.15 A Collector Dissipation - 0.4 W DC Current Gain (hfe) - 70 to 400 Transition Frequency - 80 MHz Operating and Storage Junction Temperature Range ..
৳5.00
Ex Tax:৳5.00
Model: 2366
Specifications:Part Number : A1837Function : Silicon PNP Epitaxial Type TransistorMaximum RatingsCollector-base voltage : VCBO = −230 VCollector-emitter voltage : VCEO = −230 VEmitter-base voltage : VEBO = −5 VCollector current : IC = −1 ABase current : IB = −0.1 A..
৳68.00
Ex Tax:৳68.00
Model: 3254
Specifications:Collector-to-Base Voltage : VCBO = -50 VCollector-to-Emitter Voltage : VCEO = -50 VEmitter-to-Base Voltage : VEBO = – 6 VCollector Current : IC  = -10 ACollector Current (Pulse) : ICP = -13 ABase Current : IB = – 2 ACollector Dissipation PC Tc=25°C, PT≤1s 25 WPackage:1x A222..
৳55.00
Ex Tax:৳55.00
Model: 3680
FeaturesSmall Signal NPN TransistorCurrent Gain (hFE): 450 (maximum)Continuous Collector current (IC) is 100mA Collector-Emitter voltage (VCEO) is 45VCollector-Base voltage (VCB0) is 50VEmitter Base Voltage (VBE0) is 6VAvailable in To-18 Metal can Package..
৳10.00
Ex Tax:৳10.00
BC108 NPN Metal Can Transistor BC108 NPN Metal Can Transistor
SOLD OUT
Model: 3775
Specifications:Bi-Polar NPN TransistorDC Current Gain (hFE) is 900 maximumContinuous Collector current (IC) is 200mAEmitter Base Voltage (VBE) is 5VBase Current(IB) is 10mA maximumAvailable in TO-18 Metal Can PackageMaximum Collector-Base Voltage |Vcb|: 30 V’Collector Dissipation: 0.3 WTransition Fr..
৳99.00
Ex Tax:৳99.00
Model: 4006
Type Designator: BC109Material of Transistor: SiPolarity: NPNMaximum Collector Power Dissipation (Pc): 0.3 WMaximum Collector-Base Voltage |Vcb|: 30 VMaximum Collector-Emitter Voltage |Vce|: 20 VMaximum Emitter-Base Voltage |Veb|: 5 VMaximum Collector Current |Ic max|: 0.1 AMax. Operating Junction T..
৳26.00
Ex Tax:৳26.00
Model: 4538
Specifications:Collector to Base Voltage: Vcbo = 50 VCollector to Emitter Voltage: Vceo = 45 VEmitter to Base Voltage: Vebo = 6 VCollector Current: Ic = 200 mATotal Dissipation : Ptot = 300 mW Junction Temperature: Tj = 125°CStorage Temperature: Tsg = -55 ~ +125°CPackage:1x BC147 Transistor TO9..
৳30.00
Ex Tax:৳30.00
Model: 3297
Package Type: TO-92Transistor Type: PNPMax Collector Current(IC): -800mAMax Collector-Emitter Voltage (VCE): -45VMax Collector-Base Voltage (VCB): -50VMax Emitter-Base Voltage (VBE): -5VMax Collector Dissipation (Pc): 625 MilliwattMax Transition Frequency (fT):&nbs..
৳5.00
Ex Tax:৳5.00
Model: 0279
BC547 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. BC547 has a gain value of 110 to 800, this value determines the amplification capacity o..
৳4.00
Ex Tax:৳4.00
Model: 0280
BC548 is a NPN transistor so the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. BC548 has a gain value of 110 to 800, this value determines the amplification capacity of t..
৳7.00
Ex Tax:৳7.00
Model: 3149
Features / Technical Specifications:Package Type: TO-92Transistor Type: PNPMax Collector Current(IC): -100mAMax Collector-Emitter Voltage (VCE): -45VMax Collector-Base Voltage (VCB): -50VMax Emitter-Base Voltage (VBE): -5VMax Collector Dissipation (Pc): 500 Milliwa..
৳5.00
Ex Tax:৳5.00
Model: 0282
BC558 Transistor Pinout ConfigurationPin NumberPin NameDescription1CollectorCurrent flows in through collector2BaseControls the biasing of transistor3EmitterCurrent Drains out through emitter FeaturesBi-Polar PNP Amplifier TransistorDC Current Gain (hFE) is 800 maximumContinuous Collector curre..
৳4.00
Ex Tax:৳4.00
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