Specifications:

• Type: N-Channel Power MOSFET
• Continuous Drain Current (ID): 9.2A
• Drain to Source Breakdown Voltage: 100V
• Drain Source Resistance (RDS): 0.27 Ohms
• Gate Threshold Voltage (VGS-th): 4V (max)
• Rise Time: 30nS
• Fall Time: 20nS
• Package Type: TO-220

Package:
1x IRF520 N-Channel Power MOSFET

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Description:
The IRF520 is an N-Channel Power MOSFET, offering high efficiency and performance for power switching applications. With a continuous drain current of 9.2A and a breakdown voltage of 100V, this MOSFET is perfect for interfacing with low-voltage logic circuits such as Arduino. The low threshold voltage ensures easy switching, making it ideal for controlling higher-power devices. Its fast switching characteristics (rise and fall times) make it a reliable choice for various power electronics projects. The TO-220 package makes it easy to mount on heat sinks for better thermal management.

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FAQ:

1. Q: What is the maximum continuous drain current for the IRF520?
   A: The maximum continuous drain current (ID) is 9.2A.

2. Q: What is the gate threshold voltage of the IRF520?
   A: The maximum gate threshold voltage (VGS-th) is 4V.

3. Q: What package is the IRF520 available in?
   A: The IRF520 is available in a TO-220 package.

4. Q: Can the IRF520 be used with Arduino?
   A: Yes, the IRF520 is commonly used with Arduino due to its low threshold voltage.

5. Q: What is the drain-source resistance (RDS) of the IRF520?
   A: The drain-source resistance (RDS) of the IRF520 is 0.27 Ohms.

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