
- Power Rating: 1/4W for efficient power handling
- Tolerance: ±1% for precision
- Technology: Thick Film, ensuring reliable performance
- Temperature Coefficient: 100ppm/°C, providing
Data Protection.
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The BF494 NPN Medium Frequency Transistor is designed for high-frequency applications, with a collector current limit of 30mA and a collector-emitter breakdown voltage of 20V. It has a DC current gain (hFE) of 67 at 1mA and 10V, providing excellent amplification performance for medium-frequency circuits. This transistor is ideal for RF and audio applications. Its maximum power dissipation is 350mW, making it suitable for low-power circuits. Additionally, it is lead-free and RoHS compliant, ensuring environmental compliance.
Q: What is the maximum collector current for the BF494 transistor?
A: The maximum collector current (Ic) for the BF494 transistor is 30mA.
Q: What is the DC current gain (hFE) for the BF494?
A: The DC current gain (hFE) is 67 at 1mA and 10V.
Q: What is the maximum collector-emitter breakdown voltage for this transistor?
A: The maximum collector-emitter breakdown voltage is 20V.
Q: What is the power dissipation rating of the BF494 transistor?
A: The maximum power dissipation is 350mW.
Q: Is this transistor environmentally friendly?
A: Yes, the BF494 NPN transistor is lead-free and RoHS compliant.