Speciications: Type Designator: 2SB337
Material of Transistor: Ge
Maximum Collector Power Dissipation (Pc): 12
WMaximum Collector-Base Voltage |Vcb|: 40
VMaximum Collector-Emitter Voltage |Vce|: 30
VMaximum Emitter-Base Voltage |Veb|: 1
VMaximum Collector Current |Ic max|: 7..
Specifications:Type - p-n-p
Collector-Emitter Voltage: -50 V
Collector-Base Voltage: -50 V
Emitter-Base Voltage: -5 V
Collector Current: -0.15 A
Collector Dissipation - 0.4 W
DC Current Gain (hfe) - 70 to 400
Transition Frequency - 80 MHz
Operating and Storage Junction Temperature Range ..
BD136 is a PNP transistor hence the
collector and emitter will be closed (Forward biased) when the base pin
is held at ground and will be opened (Reverse biased) when a signal is
provided to base pin. This is where a PNP transistor differs from a NPN
transistor, if you are looking for an equ..
Product DetailsPNP Power Transistors, ON SemiconductorStandardsManufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.Bipolar Transistors, ON SemiconductorA wide range of Bipolar Transistors from ON Semiconductor, which includes the following categories:Small-Signal Tran..
Transistor Polarity: PNPCollector Emitter Voltage V(br)ceo: -250VTransition Frequency ft: 30MHzPower Dissipation Pd: 50WDC Collector Current: -8ADC Current Gain hFE: 30hFETransistor Case Style: TO-220No. of Pins: 3PinsOperating Temperature Max: 150°CProdu..
MJE2955 - Power TransistorsFeatures:Collector-Emitter Voltage (VCEO): -60VCollector Current (Ic): -10ADC Current Gain (hFE): 20 to 70Power Dissipation (PD): 75zDatasheetPower Transistor Specifications List..