PNP

Specifications:Model: 2SA1216 Parameters: 200W/180V/17APackage: 1x 2SA1216 Audio Amp Transistor..

Specifications:Categories                                              ..

Specifications:Collector - Base Voltage (VCBO):                 : 230VCollector - Emitter Voltage (VCEO):             : 230VEmitter - Base Voltage (VEBO): ..

Characteristics of the bipolar transistor 2SA1962Type - PNPCollector-Emitter Voltage: -250 VCollector-Base Voltage: -250 VEmitter-Base Voltage: -5 VCollector Current: -17 ACollector Dissipation - 130 WDC Current Gain (hfe) - 55 to 160T..

Speciications: Type Designator: 2SB337 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 12 WMaximum Collector-Base Voltage |Vcb|: 40 VMaximum Collector-Emitter Voltage |Vce|: 30 VMaximum Emitter-Base Voltage |Veb|: 1 VMaximum Collector Current |Ic max|: 7..

Specifications:Type - p-n-p Collector-Emitter Voltage: -50 V Collector-Base Voltage: -50 V Emitter-Base Voltage: -5 V Collector Current: -0.15 A Collector Dissipation - 0.4 W DC Current Gain (hfe) - 70 to 400 Transition Frequency - 80 MHz Operating and Storage Junction Temperature Range ..

Specifications:Part Number : A1837Function : Silicon PNP Epitaxial Type TransistorMaximum RatingsCollector-base voltage : VCBO = −230 VCollector-emitter voltage : VCEO = −230 VEmitter-base voltage : VEBO = −5 VCollector current : IC = −1 ABase current : IB = −0.1 A..

BD136 is a PNP transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is provided to base pin. This is where a PNP transistor differs from a NPN transistor, if you are looking for an equ..

Product DetailsPNP Power Transistors, ON SemiconductorStandardsManufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.Bipolar Transistors, ON SemiconductorA wide range of Bipolar Transistors from ON Semiconductor, which includes the following categories:Small-Signal Tran..

Transistor Polarity: PNPCollector Emitter Voltage V(br)ceo: -250VTransition Frequency ft: 30MHzPower Dissipation Pd: 50WDC Collector Current: -8ADC Current Gain hFE: 30hFETransistor Case Style: TO-220No. of Pins: 3PinsOperating Temperature Max: 150°CProdu..

MJE2955 - Power Transistors..

Product Category:Bipolar Transistors - BJTManufacturer:ON SemiconductorRoHS: DetailsMounting Style:Through HolePackage / Case:TO-264-3Transistor Polarity:PNPConfiguration:SingleCollector- Emitter Voltage VCEO Max:350 VCollector- Base Voltage VCBO:350 VEmitter- Base Voltage VEBO:5 VCollector-Emi..