Specifications:Maximum Continuous Drain Current : 200mAMaximum Drain Source Voltage : 60VMaximum Drain Source Resistance : 5ΩGate Threshold Voltage (VGS) : Min = 0.8V | Max = 3VMaximum Power Dissipation&nb..
Features:Pb-Free deviceLow offset and error voltageEasily driven without bufferHigh density cell design to minimize ON-state resistance RDS(ON)Voltage controlled small signal switchParticularly suits for low voltage, low current applicationHigh saturation current capabilityRugged and ReliableFast sw..
When you need to switch a lot of power, N channel MOSFETs are best for the job. These FETs can switch over 33A and 100V and are TO-220 package so they fit nicely into any breadboard or perfboard. Heat sinking is easy with TO-220's, but because of the very low Rds(on) of down to 44 milliohm (dependin..
IRF840 N-Channel Mosfet.FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-ChannelIRF840 Datasheet..