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MOSFETs

Model: 0619-30000
Product DescriptionPart NO.:AOTF10N60Package:TO-220FDescription:MOSFET N-CH 600V 10A TO220FSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:10ARds On (Max) @ Id, Vgs:750 mOhm @ 5A, 10VVgs(th) (Max) @..
৳50.00
Ex Tax:৳50.00
Model: 0618-25000
·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) Specifications: ·Static Drain-Source On-Resistance: RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators and others ·Switching converters, motor drivers, relay drivers..
৳47.00
Ex Tax:৳47.00
Model: 2236-30000
Specification:Transistor Type: JFET - N Type ChannelVds (Drain-Source Voltage): 25 VDCVdg (Drain-Gate Voltage): 25 VDCVgs (Gate-Source Voltage): 25 VDCIgf - (Forward Gate Current): 10 mAPower: 350 mWOn Characteristics (hFE): 20 mA Idss @ 15 Vds, Vgs =0..
৳40.00
Ex Tax:৳40.00
Model: 0720-00000
Specifications:Maximum Continuous Drain Current : 200mAMaximum Drain Source Voltage          : 60VMaximum Drain Source Resistance    : 5ΩGate Threshold Voltage (VGS)              : Min = 0.8V | Max = 3VMaximum Power Dissipation&nb..
৳15.00
Ex Tax:৳15.00
Model: 3671-45000
FET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)100 VCurrent - Continuous Drain (Id) @ 25°C80A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VRds On (Max) @ Id, Vgs15mOhm @ 40A, 10VVgs(th) (Max) @ Id4V @ 250µAGate Charge (Qg) (Max) @ Vgs182 nC @ 10 VVgs (Max)±20VInput Capa..
৳145.00
Ex Tax:৳145.00
Model: 0990-40000
Features:Pb-Free deviceLow offset and error voltageEasily driven without bufferHigh density cell design to minimize ON-state resistance RDS(ON)Voltage controlled small signal switchParticularly suits for low voltage, low current applicationHigh saturation current capabilityRugged and ReliableFast sw..
৳39.00
Ex Tax:৳39.00
Model: 0615-40000
Product DescriptionPart NO.:FQA24N60Package:TO-3PNDescription:MOSFET N-CH 600V 23.5A TO-3PSupplier:SICSTOCKFET Type:MOSFET N-Channel, Metal OxideFET Feature:StandardDrain to Source Voltage (Vdss):600VCurrent - Continuous Drain (Id) @ 25° C:23.5ARds On (Max) @ Id, Vgs:240 mOhm @ 11.8A, 10VVgs(th) (Ma..
৳150.00
Ex Tax:৳150.00
Brand: AVX Model: 3683-20000
Detailed Specifications:-Number of Channels1 ChannelTransistor PolarityN-ChannelDrain-Source Breakdown Voltage (Vds)55VContinuous Drain Current (Id)110ADrain-Source Resistance (Rds On)8mOhmsGate-Source Voltage (Vgs)20VGate Charge (Qg)146 nCOperating Temperature Range-55 - 175°CPower Dissipation (Pd)..
৳155.00
Ex Tax:৳155.00
Model: 3674-30000
IRF3710 is Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr..
৳65.00
Ex Tax:৳65.00
Model: 3677-30000
Description: IRF5210 P-Channel Mosfet Transistor-OrginalFeatures:Drain-Source Volt (Vds): -55VGate-Source Volt (Vgs): 20VDrain Current (Id): -74APower Dissipation (Ptot): 200WType: P-ChannelPackage Include:1 x IRF5210 P-Channel Mosfet Transistor-Orginal..
৳110.00
Ex Tax:৳110.00
Model: 2005-32000
When you need to switch a lot of power, N channel MOSFETs are best for the job. These FETs can switch over 33A and 100V and are TO-220 package so they fit nicely into any breadboard or perfboard. Heat sinking is easy with TO-220's, but because of the very low Rds(on) of down to 44 milliohm (dependin..
৳45.00
Ex Tax:৳45.00
Model: 1055-30000
IRF840 N-Channel Mosfet.FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-ChannelIRF840 Datasheet..
৳56.00
Ex Tax:৳56.00
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