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MJE350G Bipolar Transistor

MJE350G Bipolar Transistor
MJE350G Bipolar Transistor
MJE350G Bipolar Transistor
MJE350G Bipolar Transistor
  • Type - PNP
  • Collector-Emitter Voltage: -300 V
  • Collector-Base Voltage: -300 V
  • Emitter-Base Voltage: -5 V
  • Collector Current: -0.5 A
  • Collector Dissipation - 20 W
  • DC Current Gain (hfe) - 30 to 240
  • Operating and Storage Junction Temperature Range -65 to +150 °C
  • Package - TO-126
  • These Devices are Pb-Free and are RoHS Compliant (Pb-Free version of MJE350)

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