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2N3904 Bipolar (BJT) NPN General Purpose Transistor

2N3904 Bipolar (BJT) NPN General Purpose Transistor
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Specifications:

  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:625mW
  • Frequency - Transition:300MHz
  • Mounting Type:Through Hole

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